The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
GaAs MESFETs are widely used in high speed integrated circuits (ICs) and
microwave circuits. Due to the materials and processing methods used in GaAs
MESFET fabrication, deep level traps in the substrate materials have a strong influence
on device performance.
In this work we used the drain current transient characterization...
The characteristic of the subthreshold current in a
GaAs MESFET exhibits a negative exponential function with
Vgs. After studying the behavior of this current in this
region over a range of temperature and drain bias voltages,
a subthreshold current model was developed. The model was
implemented in a circuit simulation...
A complete Gallium Arsenide Metal Semiconconductor
Field Effect Transistor (GaAs MESFET) model including deep-level
trap effects has been developed, which is far more
accurate than previous equivalent circuit models, for high-speed
applications in linear integrated circuit design.
A new self-backgating GaAs MESFET model, which can
simulate low frequency anomalies, is...
The semiconductor gallium arsenide (GaAs) has many potential
advantages over the more widely used semiconductor silicon (Si).
These include higher low field mobility, semi-insulating substrates,
a direct band-gap, and greater radiation hardness. All these
advantages offer distinct opportunities for implementation of new
circuit functions or extension of the operating conditions...
High speed photodetectors are a necessary element in
broad band digital and analog optical communication systems.
In this thesis easily integrable planar high speed
photodetectors made on undoped semi-insulating (SI) GaAs
substrates are modeled and tested. The fabrication process
of the detectors is fully compatible with GaAs
metal-semiconductor field effect...
The low thermal conductivity of gallium arsenide compared to silicon
results in self-heating effects in GaAs MESFETs that limit the electrical
performance of such devices for high power applications. To date, analytical
thermal models of self heating in GaAs MESFETs are based on the assumption
of a uniformly heated channel....
The properties of linear active coupled lines consisting of
electrically long GaAs MESFET structures are investigated for possible
applications as traveling-wave broad-band amplifiers. In addition,
the nonlinear coupled Schottky lines are studied for applications as
voltage tunable circuit elements.
The analysis of the general active asymmetric coupled transmission
lines in...