The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued.
The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
The advent of low-cost RFIC's fabricated in Silicon-based technologies has led to the use of monolithic lumped elements which are located on-die. While it is clearly advantageous to have a high degree of integration and thus fewer off chip elements, parasitic losses due to semiconducting substrate effects can be a...
A new method for accelerating the Upstream Corner Balance (UCB) discretization of the equation of transfer is introduced. The inconsistent acceleration equations for the UCB discretization are derived by applying the "Modified 4-Step" diffusion synthetic acceleration technique not to the UCB discretization, but instead to the simple corner balance (SCB)...
The electrical performance of on-chip interconnects has become a limiting factor to the performance of modern integrated circuits including RFICs, mixed-signal circuits, as well as high-speed VLSI circuits due to increasing operating frequencies, chip areas, and integration densities. It is advantageous to have fast and accurate closed-form expressions for the...
In high-frequency circuit design, performance is often limited by the quality of the passive components available for a particular process. Specifically, spiral inductors can be a major bottle-neck for Voltage-Controlled Oscillators (VCOs), Low-Noise Amplifiers (LNAs), mixers, etc. For designers to correctly optimize a circuit using a spiral inductor, several frequency-domain...
Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy...
Imaging spectra of plant tissues yield considerable potential and useful information
for basic studies and agriculture practice. We constructed an imaging spectrophotometer
with spectral range from 400 nm to 1100 nm, which was used to study various
physiological events of plant germplasm: location of bundle sheath and mesophyll cells in...