The electrical properties of ion-implanted GaAs FET channels
are investigated by two methods. First, the channel current (I) as
a function of voltage (V) is examined at different temperatures and
using different voltage ramp rates. The standard FET I-V curve,
which can be observed on a commercial curve tracer, is...
The results of an investigation into carrier dynamics in several novel functionalized and solution-processable pentacene and anthradithiophene derivatives are reported. Measurements were made of real-time photoresponse of polycrystalline thin films of these materials to ultrafast laser pulses, on picosecond to microsecond time-scales, as well as measurements of dark current and...
Thermoelectric materials are playing an increasingly significant role in the global effort to develop sustainable energy technologies. Consequently, the demand for materials with greater thermoelectric efficiency has stimulated the development of state-of-the-art interstitially doped skutterudite-based materials. However, since intermetallics are often embrittled by interstitial substitution, optimal skutterudite-based device design, manufacture,...
Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...