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Creator:: Alimardani, Nasir, McGlone, John M., Wager, John F., and Conley, John F., Jr.
Abstract:: Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
Resource Type:: Article
Full Text:: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic

Creator:: Alimardani, Nasir, King, Sean W., French, Benjamin L., Tan, Cheng, Lampert, Benjamin P., and Conley, John F., Jr.
Abstract:: The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb2O5, Ta2 O5, ZrO2, HfO2, Al2 O3, and SiO2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss...
Resource Type:: Article
Full Text:: - down occurs. The Ta2O5 and Nb2O5 diodes are roughly symmetric. The abrupt changes in fNL with voltage

Creator:: Alimardani, Nasir and Conley, John F., Jr.
Abstract:: Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al₂O₃-Ta₂O₅ bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current...
Resource Type:: Article
Full Text:: dominated by thermal emission based conduction.18 Both insulators are deposited via atomic layer deposition

Creator:: Cowell, E. William, III, Muir, Sean W., Keszler, Douglas A., and Wager, John F.
Abstract:: See article for Abstract.
Resource Type:: Article
Full Text:: MIM diode insulator. Two MIM diodes fabricated with concurrently deposited lower amorphous metal

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