Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on...
Some authors defending the "hereditarian" hypothesis with respect to differences in average IQ scores between populations have argued that the sorts of environmental variation hypothesized by some researchers rejecting the hereditarian position should leave discoverable statistical traces, namely changes in the overall variance of scores or in variance-covariance relating scores...