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  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    transistor (W-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    Transistor 109 MOS Transistor Fabrication 111 MOS Transistor Evaluation 115 Bias-Temperature Tests 120

  • High-efficiency radio-frequency power amplifiers

    Creator:
    Ewing, Gerald Dean
    Abstract:
    This dissertation describes a new radio-frequency power-amplifier circuit and mode of operation that exceeds the efficiency of the conventional class C amplifier in the low and medium h-f range. It will be found useful in applications where linearity between the input and output are not required, as in all applications...
    Resource Type:
    Dissertation
    Full Text:
    a given d-c input power is desired. The reasons for this high efficiency are the transistor

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconduc- tors are used as the

  • A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

    Creator:
    Prasad, S. Jayasimha
    Resource Type:
    Dissertation
    Full Text:
    eVt"K ) L channel length of a transistor LB Debye length m effective mass of electrons 11

  • Characterization of oxygen and carbon effects in silicon material and MOSFET devices

    Creator:
    Haddad, Homayoon
    Resource Type:
    Dissertation
    Full Text:
    submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

  • Investigation of low temperature solution-based deposition process for flexible electronics

    Creator:
    Chang, Yu-Jen
    Abstract:
    The critical contribution of this dissertation is to provide a better understanding of the fundamental Chemical Bath Deposition (CBD) growth kinetic and mechanism for the well known II-VI semiconductor CdS using the newly developed continuous flow microreactor. This continuous flow microreactor provides the temporal resolution to control the homogeneous reaction...
    Resource Type:
    Dissertation
    Full Text:
    insulator semiconductor field-effect transistor (MISFET) with a field-effect mobility of ~1.5 cm2/V s, a

  • Liquid-gated carbon nanotube transistor noise sources and sensitivity limits

    Creator:
    Sharf, Tal
    Abstract:
    Low-dimensional electronic materials offer a platform to observe biological processes with unprecedented spatial and temporal resolution. Carbon nanotubes (CNTs) are the closest physical analog to an ideal 1D system and can be scaled and integrated into multiplexed electronic circuitry. The molecular structure of a CNT is also biocompatible, making them...
    Resource Type:
    Dissertation
    Full Text:
    August 27, 2014. Title: Liquid-Gated Carbon Nanotube Transistor Noise Sources and Sensitivity