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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Resource Type Masters Thesis Remove constraint Resource Type: Masters Thesis Subject Metal semiconductor field-effect transistors Remove constraint Subject: Metal semiconductor field-effect transistors

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  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    Transistors (TFTs) ............................... 13 2.5.2 Metal-Semiconductor Field-Effect Transistor

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs

  • Wide bandwidth GaAs MESFET amplifier

    Creator:
    Yan, Kai-tuan Kelvin
    Resource Type:
    Masters Thesis
    Full Text:
    parameters from the TriQuint Semiconductor 1 gm depletion mode technology. Wide Bandwidth GaAs MESFET

  • Two dimensional numerical simulation of a non-isothermal GaAs MESFET

    Creator:
    Lin, Angela A.
    Abstract:
    The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices for high power applications. To date, analytical thermal models of self heating in GaAs MESFETs are based on the assumption of a uniformly heated channel....
    Resource Type:
    Masters Thesis
    Full Text:
    conductance in GaAs MetalSemiconductor Field Effect Transistors (MESFETs). Thermal modeling of GaAs MESFETs