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Filtering by: Rights Statement Copyright Not Evaluated Subject Semiconductors -- Defects

An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

Creator:

Godbole, Hemendra G.

Abstract:

Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...

Resource Type:

Masters Thesis
An NMR study of bistable defects in CdTe and CdF₂

Creator:

Shroyer, Mark H.

Abstract:

Bistable properties have been reported in CdF₂ and CdTe systems doped with In and Ga. It is characteristic of these materials that the excited bistable state can be accessed by optical excitation. In this work, pulsed nuclear magnetic resonance (NMR) in conjunction with illumination at low temperatures has been used...

Resource Type:

Dissertation
Indium donor/metal vacancy defect complexes in Cadmium Telluride studied with Perturbed Angular Correlation Spectroscopy

Creator:

Griffith, John W.

Abstract:

Semi-insulating, powder samples of Cadmium Telluride (CdTe) have been studied using ¹¹¹In Time Differential Perturbed Angular Correlation (PAC) Spectroscopy. The samples have been lightly doped (~10¹² cm⁻³) with ¹¹¹In atoms, which occupy well-defined metal (Cd) lattice sites and act as probes of the local environment. These substitutional donors form a...

Resource Type:

Dissertation