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Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors

Creator:

Du, Xiaosong, Flynn, Brendan T., Motley, Joshua R., Stickle, William F., Bluhm, Hendrik, and Herman, Gregory S.

Abstract:

Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on...

Resource Type:

Article

Full Text:

,a Joshua R. Motley,a William F. Stickle,b Hendrik Bluhm,c and Gregory S. Hermana,z aOregon State