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Electrical properties of GaAs FET structures

Creator:

Yang, Fanling Hsu

Abstract:

The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is...

Resource Type:

Dissertation

Full Text:

model based on a more realistic trapezoidal doping profile is derived and simulated. The simulation
Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors

Creator:

Rao, Mulpuri Venkata

Resource Type:

Dissertation

Full Text:

spectra. Cr doping seems to produce a donor-like center with an apparent ionization energy of 24 meV. It