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Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model

Creator:

Zhou, Fan, Yeh, Bao-Sung, Archila, Kevin A., and Wager, John F.

Abstract:

In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole) transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport can...

Resource Type:

Article

Full Text:

), Q3027-Q3031. doi:10.1149/2.004409jss 10.1149/2.004409jss Electrochemical Society Version of Record
Printed Oxide Thin Film Transistors: A Mini Review

Creator:

Choi, Chang-Ho, Lin, Liang-Yu, Cheng, Chun-Cheng, and Chang, Chih-Hung

Abstract:

Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs have superior device performance such as higher mobility, better sub-threshold swing, and lower off-state current. Amorphous metal oxide TFTs have an additional advantage on the device uniformity due to the lack of grain boundary issues in the poly-Si TFTs....

Resource Type:

Article

Full Text:

Technology, 4(4), P3044-P3051. doi:10.1149/2.0071504jss 10.1149/2.0071504jss Electrochemical Society