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Filtering by: Alternative title ssim EC 1119 Subject Amorphous semiconductors

Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Creator:

Triska, Joshua B.

Abstract:

Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...

Resource Type:

Masters Thesis

Full Text:

corresponds, ideally, to the transition from flat-band to EC EV EF EC EV EF EC EV EF (a
Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

Creator:

Sundholm, Eric Steven

Abstract:

Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...

Resource Type:

Masters Thesis

Full Text:

and valance bands, as shown in Fig. 2.2(c). EC EF EV Gate Insulator Semiconductor (a) (b
Amorphous oxide semiconductors in circuit applications

Creator:

McFarlane, Brian Ross

Abstract:

The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...

Resource Type:

Masters Thesis

Full Text:

Metal Ins. Semiconductor Ec EF EV Ec EF EV Ec EF EV (a) (b) (c) Figure 2.2: Energy band diagrams