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  • Electrical recommendations and formulas for metal fill in radio-frequency integrated circuits

    Creator:
    Gaskill, Steven
    Abstract:
    With increasing transistor operating frequencies, interconnects and passive devices are becoming performance limiters in integrated circuit (IC) designs. To combat this, the interconnect layers above the active silicon are trending toward low-κ dielectrics and Cu metallization. The use of these new materials has popularized chemical mechanical polishing (CMP) to planarize...
    Resource Type:
    Masters Thesis
    Full Text:
    Recommendations and Formulas for Metal Fill in Radio-Frequency Integrated Circuits Abstract approved: Andreas