Index Catalog // ScholarsArchive@OSU

Modeling and characterization of hemt devices

Creator:: Chang, Chujyh
Abstract:: Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
Resource Type:: Masters Thesis
Full Text:: ABSTRACT OF THE THESIS OF CHUJYH CHANG for the degree of Master of Science in Electrical and Computer

A P-well GaAs MESFET technology

Creator:: Canfield, Philip C.
Abstract:: The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
Resource Type:: Dissertation
Full Text:: THESIS OF Philip C. Canfield for the degree of Doctor of Philosophy in Electrical and Computer

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: Aluminum Gallium Arsenide Abstract approved: Redacted for Privacy Professor J h . Wager In this thesis

Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

Creator:: Or, Pee-Keong
Abstract:: The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
Resource Type:: Masters Thesis
Full Text:: . &, pp. 1059-1064, July, 1982. 4. C. P. Lee and M. F. Chang, " Temperature Dependence of Backgating

Design of GaAs monolithically integrated optical receiver amplifier

Creator:: Ju, Shu-ing
Resource Type:: Masters Thesis
Full Text:: shown in fig. 2-1. In the thesis, two patterns which have been studied and measured by H. C. Yang [14

Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

Creator:: Kollipara, Ravindranath Tagore
Abstract:: High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect...
Resource Type:: Dissertation
Full Text:: manuscript. The author also expresses his thanks to his colleagues Hosung Chang, Hyung Mo Yoo, John T

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Creator:: Orwa, Julius O.
Resource Type:: Masters Thesis
Full Text:: Ey = RHJx Bz so that R H = -1/ne. More generally, however, the Hall coefficient is expressed A C

Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Creator:: Schulte, Donald W.
Resource Type:: Dissertation
Full Text:: near 570°C and by including several monolayers of GaAs between the In GaAs channel layer and Al GaAs

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

Creator:: Lee, Mankoo
Abstract:: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
Resource Type:: Dissertation

ScholarsArchive@OSU

Modeling and characterization of hemt devices

A P-well GaAs MESFET technology

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

Design of GaAs monolithically integrated optical receiver amplifier

Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors

Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Analysis and modeling of GaAs MESFET's for linear integrated circuit design

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