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  • Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

    Creator:
    Orwa, Julius O.
    Resource Type:
    Masters Thesis
    Full Text:
    transistor is one of the major components in information processing systems. By far, the transistor that has

  • A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

    Creator:
    Huang, Chun-ta
    Abstract:
    A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
    Resource Type:
    Masters Thesis
    Full Text:
    region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy

  • Analog integrated circuit design using GaAs C-HFETs

    Creator:
    Gupta, Rakhee
    Abstract:
    Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A major active component of switched capacitor circuits is the monolithic operational amplifier(opamp). Because of the relatively poor speed performance...
    Resource Type:
    Masters Thesis
    Full Text:
    Field Effect Transistor (FET) technology to analog integrated circuit de­ sign. Some analog circuits

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    to generate a DC voltage reference are a thin-film resistor and MESFET a transistor. These two

  • Modeling and characterization of hemt devices

    Creator:
    Chang, Chujyh
    Abstract:
    Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
    Resource Type:
    Masters Thesis
    Full Text:
    . TABLE OF CONTENTS 1. Introduction 1 1.1 The High Electron Mobility Transistor 1 1.2 Structure of the

  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation
    Full Text:
    -semiconductor field effect transistor (MESFET) technology by deviations of the semi- insulating substrate

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown

  • Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

    Creator:
    Schulte, Donald W.
    Resource Type:
    Dissertation
    Full Text:
    compound semiconductor materials for use in modulation doped field effect transistor (MODFET) structures