Index Catalog // ScholarsArchive@OSU

Start Over

Filtering by: Alternative title ssim EC 1012 Subject Modulation-doped field-effect transistors

Modeling and characterization of hemt devices

Creator:

Chang, Chujyh

Abstract:

Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...

Resource Type:

Masters Thesis

Full Text:

as shown in Fig. 2.5. Mathematically v =1.tE , E < Ec (2.27.a) v = vs , E > Ec (2.27.b) 21
HEMT-compatible laser diodes

Creator:

Eliason, Garth W.

Resource Type:

Masters Thesis

Full Text:

densities (i.e. surface charge densities) on the order of 1012/cm2 are achievable for a structure of
Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Creator:

Schulte, Donald W.

Resource Type:

Dissertation
Radiation effects on III-V heterostructure devices

Creator:

Jun, Bongim

Abstract:

The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...

Resource Type:

Dissertation