Ambient-pressure X-ray photoelectron spectroscopy has been used to study the initial stages of dry thermal oxidation of Si₀.₆₀Ge₀.₄₀(001) grown epitaxially on Si(001). Chemical state resolved AP-XPS was performed at temperatures up to 300 ˚C and O₂ pressures up to 1 mbar. Comparisons were made to Si(001) and Ge(001). The Si...
Some important factors that affect the dimensional
control of oxide films on silicon were studied. Both N- and
P-type silicon with resistivities in the range of
0.014 to 200 ohm-cm and a (111) surface orientation
were employed in this experiment. The etching rates of
silicon dioxide in hydrofluoric acid (111)...
The yields from the oxidation of 4-methylpyrimidine with potassium permanganate were found to increase from 25 to 92 percent by the addition of small amount of potassium hydroxide to the reaction mixture. Pyrimidine-4-carboxylic acid decarboxylates in hot aqueous solution to yield pyrimidine and carbon dioxide. The rate is that decarboxylation...