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  • Radiation effects in compound semiconductor heterostructure devices

    Creator:
    Sarkar, Aveek, 1974-
    Abstract:
    Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
    Resource Type:
    Masters Thesis
    Full Text:
    exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation

  • Radiation effects in III-V semiconductors and heterojunction bipolar transistors

    Creator:
    Shatalov, Alexei
    Abstract:
    The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/InGaAs HBTs are developed and subsequently employed to produce...
    Resource Type:
    Dissertation
    Full Text:
    studies of radiation-induced degradation of HBTs. ••• 4 Effect #1 [:::::::7:-::~~ii~~:~~~~i'S

  • Terahertz Induced Non-linear Electron Dynamics in Nanoantenna Coated Semiconductors at the Sub-picosecond Timescale

    Creator:
    Stickel, Andrew
    Abstract:
    This dissertation is an exploration of the material response to Terahertz (THz) radiation. Specifically we will explore the ultrafast electron dynamics in the nonperturbative regime in semiconductors that have been patterned with nanoantenna arrays using broadband, high intensity, THz radiation. Three main semiconductor materials will be studied in this work....
    Resource Type:
    Dissertation
    Full Text:
    fashion, at least in the sense that it is depends on the acceleration of electrons to produce radiation

  • Radiation effects on III-V heterostructure devices

    Creator:
    Jun, Bongim
    Abstract:
    The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...
    Resource Type:
    Dissertation
    Full Text:
    Doctor of Philosophy in Physics presented on July 1, 2002. Title: Radiation Effects on Ill-V

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    pronounced radiation effect shown in SHBTs is gain degradation. Dis- placement damage in the bulk of base