This thesis presents some experimental results for
producing controlled PN and NPN diffused structures in
silicon by varying the strength of the diffusion sources.
Boron diffusions were carried out in a N₂ atmosphere at
1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as
sources. Phosphorus diffusions were...
Some important factors that affect the dimensional
control of oxide films on silicon were studied. Both N- and
P-type silicon with resistivities in the range of
0.014 to 200 ohm-cm and a (111) surface orientation
were employed in this experiment. The etching rates of
silicon dioxide in hydrofluoric acid (111)...