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Filtering by: Advisor Vechten, James A. Van Remove constraint Advisor: Vechten, James A. Van Subject Silicon -- Diffusion rate Remove constraint Subject: Silicon -- Diffusion rate

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  • An examination of point defects and atomic diffusion in silicon

    Creator:
    Monson, Tyrus K.
    Abstract:
    The self-interstitial defect is commonly regarded as important in regulating diffusion in silicon. A review of the literature reveals that the scientific bases for invoking the self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been largely ignored. One argument which has been used to establish dominance...
    Resource Type:
    Dissertation
    Full Text:
    Diffusion in Silicon. Abstract approved: James A. Van Vechten The self-interstitial defect is commonly