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Filtering by: Creator Hoffman, Jeremy S. Remove constraint Creator: Hoffman, Jeremy S. Subject Thin film transistors -- Design and construction Remove constraint Subject: Thin film transistors -- Design and construction

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  • Development, fabrication, and characterization of transparent electronic devices

    Creator:
    Hoffman, Randy L.
    Abstract:
    The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Randy L. Hoffman for the degree of

  • Low-cost deposition methods for transparent thin-film transistors

    Creator:
    Norris, Benjamin J.
    Abstract:
    The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
    Resource Type:
    Dissertation
    Full Text:
    . Spin-coated ZnO TTFT mobilities are consistently in the range of 0.1 - 0.2 cm2/V s. Spin-coating

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    ≈ 0 V, field-effect mobility of µFE = 9 cm−2V−1s−1, subthreshold slope of S = 90 mV/dec, and drain

  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    spectrum. The mobility, conductivity, and carrier concentration of α-BaCu2S2 are 3.5 cm 2/V-s, 17 S/cm

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    . The inverse subthreshold voltage swing, S, extracted from a log(ID) – VGS curve, increases as NT and

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    acknowledgements. Two specific people I would like to mention are Randy Hoffman, inventor of the inorganic

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    many aspects of this thesis. As inventor of the transparent transistor, Randy Hoffman suggested

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    parameters employed for this simulation are: VT= -5 V, Ca=70 nF/cm2, µ = 30 cm2N-s, and ZIL= 10:1

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    -case polycrystalline films. Material Bandgap Conductivity Electron concentration Mobility (eV) (S cm−1

  • Development of solution-based reaction processes for micro- and nano-structured semiconductors

    Creator:
    Lee, Doo-Hyoung
    Abstract:
    The focus of this study is to develop a general and low-cost solution-based process to fabricate micro- and nano-structured semiconductors that are suitable for electronics. This process uses simple metal halide precursors dissolved in a solvent (organic or aqueous) and is capable of forming uniform and continuous thin films via...
    Resource Type:
    Dissertation
    Full Text:
    L. Rorrer, Dr. Gregory S. Herman, Dr. Thomas K. Plant, and Dr. Vincent T. Remcho. In particular, a