Cobalt germanides have been widely studied as semiconductor contact materials, but recent theoretical studies suggest that they may also be excellent catalysts for methane steam reforming with stabilities and activities comparable to noble metal catalysts. In order to study the catalytic activity of cobalt germanides, it is critical to first...
Advances in energy technologies and electronics have typically occurred through either heightened performance or cost reduction. This dissertation explores both routes through a series of fundamental material studies that may contribute to the enabling of next generation devices. Solution based syntheses and deposition of chemical products offer a low cost...
Zinc Sulfide (ZnS) thin film, with a wide band gap, has been used for many applications, such as buffer layer for CIGS solar cells, light emitting diodes and thin film electroluminescent devices.
In this work, ZnS thin films were prepared using two different deposition processes. In the first method, ZnS...
The motivation for undertaking this research was to increase the understanding of processing colloidal semiconductor nanocrystals and thin films metallic glasses to enable their wider application in future devices. This research covered two unique materials, lead selenide (PbSe) nanocrystals and thin film metallic glass alloy of zirconium copper aluminum nickel...
Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Current cadmium telluride and copper indium gallium diselenide thin-film solar cells
(TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs,
the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which
necessitates the use of a high purity, defect-free thin film....
The amorphous to crystalline phase change is of great interest for the production and operation of phase change memory and germanium electronic devices. Phase change memory relies on the ability to differentiate between differences in optical or electrical properties between the amorphous and crystalline phases of a single material. Amorphous...
The development of solution-based methods for deposition of different thin film material is presented as an alternative to high cost vacuum-based methods. For certain materials, vacuum techniques are unsuitable for processing. Additionally, vacuum-based processes present high capital costs associated with equipment, and slow processing times. Atmospheric pressure solution based techniques...