A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes...
Cobalt germanides have been widely studied as semiconductor contact materials, but recent theoretical studies suggest that they may also be excellent catalysts for methane steam reforming with stabilities and activities comparable to noble metal catalysts. In order to study the catalytic activity of cobalt germanides, it is critical to first...
Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
Zinc Sulfide (ZnS) thin film, with a wide band gap, has been used for many applications, such as buffer layer for CIGS solar cells, light emitting diodes and thin film electroluminescent devices.
In this work, ZnS thin films were prepared using two different deposition processes. In the first method, ZnS...