The selective masking effect of a thermally grown layer of silicon
dioxide has been widely utilized as a technique for controlling the
geometry and impurity concentration in semi-conductor device technology.
It is also recognized that the passivation of the silicon surface
by the vitreous silicon dioxide envelope protects the underlying...
This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the rise, storage, and fall times at a single operating point where the transistor beta, cutoff frequency and collector capacitance are known. The second set of...
This thesis is an investigation of the characteristics of transistor-coupled logic using both theoretic and experimental methods. The steady state and transient behavior of the transistor are first investigated, especially as applied to the common emitter configuration. A number of references giving further information are cited.
Next, the characteristics of...
Four methods for the simultaneous fabrication of
field-effect and bipolar transistors have been investigated.
The basic process involves obtaining two different
junction depths by a single diffusion. This was
accomplished by the techniques of (1) partial masking,
(2) two depositions, (3) etched channels, and (4) oxide
depletion.
The first three...
Vacuum evaporated dielectrics for use in MOS structures
were studied in this research project. Dielectric
films were deposited on substrates by electron bombardment
evaporation of sapphire and quartz source materials.
These deposited films were studied using infrared spectroscopy,
index of refraction, density, and dielectric constant
measurements. Etching tests were also...
The theoretical aspects and fabrication techniques of
a new surface field-effect transistor were investigated.
The new MOS-transistor uses a three-layer structure
similar to those found in bipolar transistors. The new MOS
structure introduces an impurity gradient in the channel
region of the transistor and also makes it possible to reduce...
The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices
made with single-layer aluminum-oxide films and double-layer
films which were made by evaporating aluminum oxide
over thermally-grown silicon dioxide as gate insulation
have been investigated. Vacuum-evaporated aluminum oxide
has features which are suitable for fabricating MOS devices....