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  • Compatible field-effect and bipolar transistors

    Creator:
    Cheung, David Kin-Poon
    Abstract:
    Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a single diffusion. This was accomplished by the techniques of (1) partial masking, (2) two depositions, (3) etched channels, and (4) oxide depletion. The first three...
    Resource Type:
    Masters Thesis
    Full Text:
    predictability. The field-effect transistor parameters obtained were comparable for all three methods

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    of an MOS Transistor. 8 5. Typical Current-Voltage Characteristics of the MOS Transistor 9 6

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    The MOS tetrode transistor AN ABSTRACT OF THE THESIS OF

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    transistor (W-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of

  • Predicting transistor switching time

    Creator:
    Richardson, Dennis W.
    Abstract:
    This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the rise, storage, and fall times at a single operating point where the transistor beta, cutoff frequency and collector capacitance are known. The second set of...
    Resource Type:
    Masters Thesis
    Full Text:
    predicting the switching times of a saturated transistor. The first set of equations defines the rise

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    Transistor 109 MOS Transistor Fabrication 111 MOS Transistor Evaluation 115 Bias-Temperature Tests 120

  • Lumped model transistor noise analysis

    Creator:
    Akkaya, Dogan Ibrahim
    Resource Type:
    Masters Thesis
    Full Text:
    Lumped model transistor noise analysis LUMPED MODEL

  • The protection of semiconductor devices from electrical transients

    Creator:
    Smith, Roy John
    Resource Type:
    Masters Thesis
    Full Text:
    maximum allowable energy dissipation in a transistor can be approximated by using the theore- tical

  • The binistor as an electronic switching element

    Creator:
    Ballieu, Howard Lee
    Resource Type:
    Masters Thesis
    Full Text:
    transistor Schmitt trigger .......... 17 7 A binistor low-frequency level-sensing switching circuit