Low temperature noise measurements on junction field-effect
transistors tend to substantiate a theory of low frequency field-effect
transistor noise based on the presence of generation centers in the
gate-channel depletion region. Measurements of device noise voltage
versus temperature reveal pronounced maxima and minima over the
temperature range of 300° K...
This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...