As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom...
The fracture mechanics of Charpy V-notch specimens of
Zircaloy-4 and phosphorus contaminated Zircaloy-4 were
investigated. Three-point bend and impact tests with Charpy
V-notch samples provided an efficient and economical method
of fracture evaluation. Fracture failure was monitored by
the force-displacement curve. Failure was initially
analyzed using fracture toughness values as...