Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly...
This research work focuses on the mechanism of 1/f noise in GaAs
resistors on semi-insulating substrates and 1/f noise due to temperature
fluctuations in heat conduction in resistors, diodes, and bipolar transistors. The
goal of this research is to generate accurate models to explain physical origin of 1/f
noise in...
Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
The purpose of this work is to develop a new model for LDD
n-MOSFET degradation in drain current under long-term AC use
conditions for lifetime projection which includes a self-limiting
effect in the hot-electron induced device degradation.
Experimental results on LDD n-channel MOSFETs shows that the
maximum drain current degradation...
The purpose of the study was to identify and examine critical factors that either promote or hinder acute care hospitals decision-making on adopting complementary and alternative medicine (CAM). All acute care hospitals in the states of Oregon and Washington were included in the study. Individual interviews were conducted at the...
Previous work at Stanford University has demonstrated that inductance in the
substrate connection is the principal problem underlying the coupling of digital
switching noise into analog circuits. The low impedance substrate can be treated
as a single node over a local area. Switching in the digital circuits produces
current transients...
A complete Gallium Arsenide Metal Semiconconductor
Field Effect Transistor (GaAs MESFET) model including deep-level
trap effects has been developed, which is far more
accurate than previous equivalent circuit models, for high-speed
applications in linear integrated circuit design.
A new self-backgating GaAs MESFET model, which can
simulate low frequency anomalies, is...
A negatively biased substrate has several advantages over a grounded substrate in CMOS
technology. The on-chip generation of this negative substrate bias has made chips easier
to use when only a single supply is preferred. This project demonstrates two types of
charge pump circuits used to generate negative voltages not...