We have investigated a second-order phase transition of the vortex lattice in thin-film Nd₁.₈₅Ce₀.₁₅CuO[subscript 4-y] from 1 mT to 1 T applied magnetic fields. The dc resistivity-current density data for each field exhibit critical scaling consistent with a second-order vortex-liquid to vortex-solid phase transition. The high-field data support the vortex-glass...
The growth of YMn₀.₃₅In₀.₆₅O₃ thin films and their optical and magnetic behavior are reported. The YMn₀.₃₅In₀.₆₅O₃ thin film grows along the (0001) orientation with hexagonal structure similar to YMnO₃ on c-plane sapphire. The film shows paramagnetic behavior in the temperature range measured. The film exhibits a blue color due to...
Epitaxial LaRh₁/₂Mn₁/₂O₃ thin films have been grown on (001)-oriented LaAlO₃ and SrTiO₃ substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K, a coercive field of 1200 Oe, and a saturation magnetization of 1.7μB per formula unit. The...
Piezoelectric materials convert mechanical strain into a dielectric displacement, as well as the converse, allowing these materials to be used as sensors, actuators, and transducers. Currently, lead zirconate titanate (PZT) is the primary material used in these applications. Due to environmental toxicity and safety concerns associated with Pb, development of...
Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and piezoelectric properties. The material has been widely studied for use in high frequency transducers, multi-layered capacitors, and ferroelectric random access memory. Copper foils are an inexpensive, flexible substrate with a low resistivity which makes them ideal...
Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
Spectroscopic ellipsometry (SE) is used to characterize amorphous and crystalline thin films of TiO2. Amorphous precursor films of TiO2 are deposited by radio frequency magnetron sputtering on fused silica and silicon substrates. Annealing the amorphous precursor films induces them to crystallize into either pure or mixed phases of the three...
The optical transition in high-fraction polymorphs of titania (TiO2) were investigated to determine the band gap behavior of the most common polymorphs—brookite, rutile, and anatase—the values of which are varied in the literature. The direct optical band gaps of brookite, rutile, and anatase, were determined to be 3.37(7)eV, 3.41(11)eV and...
Zinc Sulfide (ZnS) thin film, with a wide band gap, has been used for many applications, such as buffer layer for CIGS solar cells, light emitting diodes and thin film electroluminescent devices.
In this work, ZnS thin films were prepared using two different deposition processes. In the first method, ZnS...
The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...