The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
Current cadmium telluride and copper indium gallium diselenide thin-film solar cells
(TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs,
the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which
necessitates the use of a high purity, defect-free thin film....
Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
White electroluminescence (EL) was observed for the
first time from diamond-like carbon (DLC) films at room
temperature. Electroluminescence was observed by the
application of ac voltages in excess of 200 V to a metal-insulator-
semiconductor (i.e. DLC)-insulator-metal (MISIM)
device structure.
For EL applications, three types of the DLC films were...
Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
The memristor is a resistive switching random access memory (RRAM) with a basic metal/insulator/metal (MIM) structure. These nano devices are nonvolatile, have a conceptually simple crossbar device structure, are power efficient and have the capability of switching between high and low resistance states in nanoseconds making them promising to replace...
The drain current of InP MISPETs is often observed
to decrease as a function of time after the application of
a positive gate bias which involves an accumulation of
electrons in the channel. Various models have been
proposed for this drain current drift (DCD) phenomenon.
In this thesis, variable-temperature bias-stress...