Ferrites have been used for various high frequency applications as bulk
materials. These applications, however, are limited to large dimension devices. In
this thesis, thin film ferrites were deposited from a low temperature solution-based
deposition process that is suitable for micro-scale high frequency applications. The
low temperature nature of this...
A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment.
First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
The critical contribution of this dissertation is to provide a better
understanding of the fundamental Chemical Bath Deposition (CBD) growth
kinetic and mechanism for the well known II-VI semiconductor CdS using the
newly developed continuous flow microreactor. This continuous flow microreactor
provides the temporal resolution to control the homogeneous reaction...
The focus of this study is to develop a general and low-cost solution-based
process to fabricate micro- and nano-structured semiconductors that are suitable
for electronics. This process uses simple metal halide precursors dissolved in a
solvent (organic or aqueous) and is capable of forming uniform and continuous
thin films via...
In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and zinc-doped tin (IV) oxide has been performed by spin coating. Solution...
The aim of this dissertation is to develop oxide semiconductors by radio-frequency
sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors
are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin
oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
An experimental study of absorption of ammonia into a constrained thin film of ammonia-water solution is presented. A large aspect ratio microchannel with one of its walls formed by a porous material is used to constrain the thickness of the liquid film. Experiments were performed at a pressure of 1,...