The major limiting factor of DRAM access time is the low transconductance of the
MOSFET's which have only limited current drive capability. The bipolar junction
transistor(BJT) has a collector current amplification factor, β, times base current and is
limited mostly by the willingness to supply this base current. This collector...
In Radio Frequency Integrated Circuits (RFIC) or high frequency digital
ICs, there is a demand to probe the internal nodes for testing. The ultra low
capacitance RFIC probe presented in his work is a flexible tool for these
applications. The probe utilizes the coupling between a tungsten needle and the...
In the first part of this dissertation, low frequency l/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. This noise phenomenon is not described by...
Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
Solar photovoltaic is considered one among many new alternatives to satisfy
our demand for energy. Solar Cells have undergone changes in the last 50 years or so
since its invention in 1954. Solar power is beginning to challenge conventional
energy sources in terms of mainstream acceptance. Solar power along with...
Previous work at Stanford University has demonstrated that inductance in the
substrate connection is the principal problem underlying the coupling of digital
switching noise into analog circuits. The low impedance substrate can be treated
as a single node over a local area. Switching in the digital circuits produces
current transients...
Reliability of sub-micron analog circuits is directly related to impact ionization and
the subsequent changes in threshold voltage and drain current of n-MOSFET devices.
This thesis presents theory of the hot-electron effects on the device characteristics and
circuit performance, explores several approaches to improve performance at both the
device and...
The refresh times of all dynamic charge storage devices, best
characterized by the generation lifetime at roan temperature and the
recombination lifetime at higher device operating temperatures
(T>70°C), strongly influence the efficient and successful operation
of dynamic charge storage devices such as DRAM's and CCD's. Both
recombination and generation lifetime...