Four methods for the simultaneous fabrication of
field-effect and bipolar transistors have been investigated.
The basic process involves obtaining two different
junction depths by a single diffusion. This was
accomplished by the techniques of (1) partial masking,
(2) two depositions, (3) etched channels, and (4) oxide
depletion.
The first three...
The theoretical aspects and fabrication techniques of
a new surface field-effect transistor were investigated.
The new MOS-transistor uses a three-layer structure
similar to those found in bipolar transistors. The new MOS
structure introduces an impurity gradient in the channel
region of the transistor and also makes it possible to reduce...
The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices
made with single-layer aluminum-oxide films and double-layer
films which were made by evaporating aluminum oxide
over thermally-grown silicon dioxide as gate insulation
have been investigated. Vacuum-evaporated aluminum oxide
has features which are suitable for fabricating MOS devices....
The MOS tetrode transistor is studied in this project.
This device is ideally suited for high frequency and
switching application.
In effect it is the solid state
analogy of a multigrid vacuum tube performing a very useful
multigrid function.
A new structure is developed for
p-channel 10 ohm-cm. silicon substrate...
The use of double-diffused n-type MOS transistor
(DN-MOS) in a complementary MOS random-access-memory (CMOS
RAM) cell is the main objective of this investigation.
DN-MOS transistors and conventional p-channel MOS
transistors on the same chip have been successfully fabricated.
Process sequence effects on device threshold voltage
and channel length are discussed....
This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the rise, storage, and fall times at a single operating point where the transistor beta, cutoff frequency and collector capacitance are known. The second set of...