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  • Instabilities in InP MIS capacitors

    Creator:
    Juang, Min Tzuan
    Abstract:
    The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
    Resource Type:
    Masters Thesis
    Full Text:
    IN InP !US CAPACITORS 1. INTRODUCTION Compound semiconductors such as GaAs and InP have attracted

  • A thermoelectric study of doped liquid thallium-tellurium alloys

    Creator:
    Field, Marshall B.
    Abstract:
    Electrical resistivity and thermoelectric power measurements have been made over the temperature range of 450° to 600°C on n-type liquid thalliurn-tellurium solutions. Liquids with compositions from 61.5 to 72.0 atomic percent thallium were studied. In addition, alloys of some of the three component thallium-teIlurium solutions containing small amounts of silver,...
    Resource Type:
    Masters Thesis
    Full Text:
    , semiconductor statistics. New York, Pergarnon Press. 381 p. Cutler, M. and J"F. Leavy. t963. .l,iquid

  • NMR investigation of cadmium telluride single crystals doped with group III elements

    Creator:
    Goebel, Andreas
    Resource Type:
    Masters Thesis
    Full Text:
    certain nuclei of the sample, e.g. the dopant in a semiconductor. However, it is necessary, that the

  • An NMR study of bistable defects in CdTe and CdF₂

    Creator:
    Shroyer, Mark H.
    Abstract:
    Bistable properties have been reported in CdF₂ and CdTe systems doped with In and Ga. It is characteristic of these materials that the excited bistable state can be accessed by optical excitation. In this work, pulsed nuclear magnetic resonance (NMR) in conjunction with illumination at low temperatures has been used...
    Resource Type:
    Dissertation
    Full Text:
    CdTe and CdF~ 1. Introduction A semiconductor (or insulator) can be described in terms of its

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    : Characterization of Solution-Based Inorganic Semiconductor and Dielectric Materials for Inkjet Printed Elecronics

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    ). ...............................................................................................................7 2.3 Energy band diagram and definition of parameters for an n-type semiconductor. Notice that

  • Transition metal solar absorbers

    Creator:
    Altschul, Emmeline Beth
    Abstract:
    A new approach to the discovery of high absorbing semiconductors for solar cells was taken by working under a set of design principles and taking a systemic methodology. Three transition metal chalcogenides at varying states of development were evaluated within this framework. Iron pyrite (FeS₂) is well known to demonstrate...
    Resource Type:
    Masters Thesis
    Full Text:
    , CuTaS3, a known but never characterized material, is also proposed as a high absorbing semiconductor

  • Fracture toughness of void-site-filled skutterudites

    Creator:
    Eilertsen, James S.
    Abstract:
    Thermoelectric materials are playing an increasingly significant role in the global effort to develop sustainable energy technologies. Consequently, the demand for materials with greater thermoelectric efficiency has stimulated the development of state-of-the-art interstitially doped skutterudite-based materials. However, since intermetallics are often embrittled by interstitial substitution, optimal skutterudite-based device design, manufacture,...
    Resource Type:
    Masters Thesis

  • Processing of nanoscale materials

    Creator:
    Hostetler, Eric B.
    Abstract:
    The motivation for undertaking this research was to increase the understanding of processing colloidal semiconductor nanocrystals and thin films metallic glasses to enable their wider application in future devices. This research covered two unique materials, lead selenide (PbSe) nanocrystals and thin film metallic glass alloy of zirconium copper aluminum nickel...
    Resource Type:
    Masters Thesis
    Full Text:
    understanding of processing colloidal semiconductor nanocrystals and thin films metallic glasses to enable