This paper analyzes the theory and performance of a
Schottky barrier diode detector used over a frequency range
extending from a few kilohertz into the gigahertz region.
The process of large signal rectification is analyzed with
the simplified detector circuit. Phenomena which can
affect the rectification process at high frequencies,...
Changes in the diode characteristics of three different
types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters
in which measurable changes were observed were the forward
resistance, the reverse breakdown voltage, the
forward "knee" of the diode curve and the constant of
proportionality relating the...
The study on a p-n junction gallium arsenide avalanche photodiode
is reported. The procedures of the fabrication of the diodes
and the measurement of the device performance in terms of photomultiplication
factors are described. The photodiode is mesa type
with an active diameter of 60 microns, and the junction depth...
The operation of a tunnel-diode delay-line memory cell is
examined in some detail, and a digital computer program which
approximately simulates the operation of this memory cell is developed.
The data from the computer simulation is compared with the
available experimental data and found to agree very closely for clock...
Wideband tunnel-diode amplifiers using common-base
transistor stages for isolation were investigated for
stability criteria, frequency response, and the effects
of temperature and voltage supply fluctuations. For the
first time the full frequency spectrum of a tunnel-diode,
from d-c to the gigahertz (GHz) range, was able to be
utilized in an...
The widespread adoption of wavelength division multiplexing to increase the bandwidth of optical fiber communication systems has provided a major impetus for research on low cost, single-mode, wavelength stable tunable diode lasers for use in optical telecommunications due to the large volume of lasers required. Other applications, such as demodulation...
Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
This thesis reports on the crystal growth, fabrication,
modeling and performance of Graded Index-Separate Confinement
Heterostructure laser diodes which contain pseudomorphic InGaAs as the
active region material. Laser epitaxial layers were grown with
different indium mole-fractions, and a constant InGaAs layer thickness
of 10 nm, on both sides of the...