Index Catalog // ScholarsArchive@OSU

Liquid-gated carbon nanotube transistor noise sources and sensitivity limits

Creator:: Sharf, Tal
Abstract:: Low-dimensional electronic materials offer a platform to observe biological processes with unprecedented spatial and temporal resolution. Carbon nanotubes (CNTs) are the closest physical analog to an ideal 1D system and can be scaled and integrated into multiplexed electronic circuitry. The molecular structure of a CNT is also biocompatible, making them...
Resource Type:: Dissertation
Full Text:: ..................................................................................... 37 3. Origins of charge noise in carbon nanotube field effect transistor biosensors

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: varies with electric field because of the Poole-Frankel effect. The calculated activation energy is very

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:: Zhou, Junlin, 1973-
Resource Type:: Masters Thesis
Full Text:: channel PMOS transistors, the flicker noise is due to the bulk effect, and it follows the mobility

Field-effect transistor noise at low temperatures

Creator:: Spaulding, Richard Alan
Abstract:: Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
Resource Type:: Masters Thesis
Full Text:: Field-effect transistor noise at low temperatures AN

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

Creator:: Cheng, Mark
Abstract:: This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
Resource Type:: Masters Thesis
Full Text:: structure might be because of the short channel effect. For the bipolar transistor, the 1/f noise is

CMOS low noise amplifier design utilizing monolithic transformers

Creator:: Zhou, Jianjun J.
Abstract:: Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
Resource Type:: Dissertation
Full Text:: of the induced gate current noise in MOS transistor. 20 2.3 Small-signal noise circuit of a MOS

A MOSFET integrated circuit shift register

Creator:: Chen, David Wei
Abstract:: This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate 1, 4, and 16-bit static shift registers constructed on a single monolithic chip, each with independent input and output terminals. Type D flip-flops are used...
Resource Type:: Masters Thesis
Full Text:: SHIFT REGISTER I. INTRODUCTION Metal-oxide-semiconductor field-effect transistor (MOSFET) shift

Lumped model transistor noise analysis

Creator:: Akkaya, Dogan Ibrahim
Resource Type:: Masters Thesis
Full Text:: Lumped model transistor noise analysis LUMPED MODEL

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Creator:: Yindeepol, Wipawan, 1960-
Abstract:: Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
Resource Type:: Masters Thesis
Full Text:: carings. TABLE OF CONTENTS 1. Introduction 1 1.1 The Modulation Doped Field Effect Transistor 1 1.2

High speed analog circuit design using the heterostructure insulated gate field effect transistor

Creator:: Smith, Alexander B.
Abstract:: As Si MOS approaches its maximum limits in speed and bandwidth, new devices are desired to meet the needs of high speed communications and signal processing. A device that exhibits superior performance to Si MOS, BJT, and GaAs technology is the HEMT (high electron mobility transistor). The HEMT offers superior...
Resource Type:: Masters Thesis
Full Text:: insulated gate field effect transistor AN ABSTRACT OF THE THESIS OF Alexander B. Smith for the degree of

ScholarsArchive@OSU

Liquid-gated carbon nanotube transistor noise sources and sensitivity limits

Noise measurements, models and analysis in GaAs MESFETs circuit design

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Field-effect transistor noise at low temperatures

Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

CMOS low noise amplifier design utilizing monolithic transformers

A MOSFET integrated circuit shift register

Lumped model transistor noise analysis

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

High speed analog circuit design using the heterostructure insulated gate field effect transistor

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