In this work we consider two multiscale applications with tremendous computational complexity at the lower scale. First, we examine a model for charge transport in semicon- ductor structures with heterojunction interfaces. Due to the complex physical phenomena at the interface, the model at the design scale is unable to adequately...
Charge transport in a semiconductor structure with heterojunction is described by a multiscale partial differential equation model. This model can be used, e.g., for the design of more efficient solar cells. Phenomena at the heterojunction must be resolved at the angstrom scale while the size of the device is that...
The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...