The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The...
The electrical behavior of on-chip interconnects has become a dominant factor in silicon-based high speed, RF, and mixed-signal integrated circuits. In particular, the frequency-dependent loss mechanisms in heavily-doped silicon substrates can have a large influence on the transmission characteristics of on-chip interconnects. To optimize the performance of the integrated circuit,...