Index Catalog // ScholarsArchive@OSU

Creator:: McArthur, R. C., Davidson, J. D., Wager, J. F., Khormaei, I., and King, C. N.
Abstract:: The capacitance-voltage (C-V) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) display devices. Analysis of the C-V and aging characteristics of ZnS:Mn ACTFEL devices indicates that the C-V technique is complementary to the charge-voltage technique in the extraction of device physics...
Resource Type:: Article

Creator:: Kim, S. B. and Wager, J. F.
Abstract:: White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. ac voltages in excess of 200 V were applied to a metal-insulator-semiconductor (i.e., DLC)-insulator-metal device structure to observe EL. At an applied voltage of 235 V, the brightness and efficiency were 0.5 fl...
Resource Type:: Article

Creator:: Douglas, A. A., Wager, J. F., Morton, D. C., Koh, J. B., and Hogh, C. P.
Abstract:: Hot electron luminescence experiments are performed on ZnS alternating-current thin-film electroluminescent (ACTFEL) devices in order to determine the extent to which the electron distribution is heated. The luminescence spectrum is found to be broad and essentially featureless up to a high energy cutoff of approximately 3.7 eV, which is determined...
Resource Type:: Article
Full Text:: conditions in a ZnS ACTFEZ. device, a significant fraction of the electrons transported across the phosphor

Creator:: Liliental, Z., Wager, J. F., and Goodnick, S. M.
Abstract:: InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence...
Resource Type:: Article

Creator:: Abu-Dayah, A., Kobayashi, S., and Wager, J. F.
Abstract:: The internal charge versus phosphor field (Q-Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q-Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may...
Resource Type:: Article
Full Text:: characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices

Creator:: Wasserman, A.
Abstract:: Electron avalanche due to intraband optical absorption is discussed as a mechanism responsible for laser induced damage in certain insulating crystals.
Resource Type:: Article

Creator:: Tom, D. W., Platzer, R., Gardner, John A., and Tate, Janet
Abstract:: Radioactive In has been incorporated into oriented thin films of YBa₂Cu₃O₇₋δ during a thermal coevaporation process. The hyperfme technique of perturbed γγ-angular correlation spectroscopy shows that 60% of the indium substitutes at a single site in the superconductor. We obtain spectra with reasonable statistics from 2 mCi of starting material,...
Resource Type:: Article
Full Text:: Incorporation of hyperfine probes into the thin-film

ScholarsArchive@OSU