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Filtering by: Advisor Van Vechten, James A. Remove constraint Advisor: Van Vechten, James A.

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Monte Carlo simulation of atomic diffusion in Si and GaAs via vacancies and interstitials

Creator:

Schmid, Uwe

Abstract:

A computer simulation program, which runs efficiently on micro-computers, for the diffusion of point defects in the diamond and zincblende structure was developed. The simulated point defects comprise vacancies, host or impurity interstitials on any of three types of interstitials sites, and impurities. Diffusion via vacancy first and second neighbor...

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Masters Thesis

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"Ballistic Model" (Van Vechten, 1975) 13-18, this 16 is the threshold for the hop into a given zone
Fundamental studies of atomic diffusion by computer simulation of atomic processes on the giga event scale and multiple PC's in parallel

Creator:

Zhang, Qiongshan

Abstract:

The classic treatment of diffusion by Einstein and by Chandrasekhar assumed conservative boundary conditions; mobile species were neither created nor destroyed on the sample surface. It is normal to assume that vacancies and host interstitials are created and annihilated on incoherent interfaces or free surfaces; i.e., these are assumed to...

Resource Type:

Masters Thesis

Full Text:

:_ James A. Van Vechten The classic treatment of diffusion by Einstein and by Chandrasekhar assumed
An examination of point defects and atomic diffusion in silicon

Creator:

Monson, Tyrus K.

Abstract:

The self-interstitial defect is commonly regarded as important in regulating diffusion in silicon. A review of the literature reveals that the scientific bases for invoking the self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been largely ignored. One argument which has been used to establish dominance...

Resource Type:

Dissertation

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Diffusion in Silicon. Abstract approved: James A. Van Vechten The self-interstitial defect is commonly
A 6% efficient MIS particulate silicon solar cell

Creator:

Greer, Michael R.

Resource Type:

Masters Thesis

Full Text:

Professor James A. Van Vechten for giving me the opportunity to work on this challenging project and

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Academic Affiliation

Physics2
Electrical and Computer Engineering1
Mechanical Engineering1

Advisor

van Vechten, James A.3
Vechten, James A. van1

Commencement Year

Commencement Year range begin – Commencement Year range end

Current results range from 1989 to 1998

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Committee Member

Arthur, J. R.1
Kolodziej, W.1

Creator

Greer, Michael R.1
Monson, Tyrus K.1
Schmid, Uwe1
Zhang, Qiongshan1

Date

Date range begin – Date range end

Current results range from 1988 to 1998

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Decade

1990-19993
1980-19891

Degree Field

Physics2
Electrical and Computer Engineering1
Mechanical Engineering1

Degree Level

Master's3
Doctoral1

Degree Name

Master of Science (M.S.)3
Doctor of Philosophy (Ph.D.)1

Language

English [eng]4

Non-Academic Affiliation

Oregon State University. Graduate School4

Peer Reviewed

No4

Resource Type

Masters Thesis3
Dissertation1

Rights Statement

Copyright Not Evaluated4

Subject

Diffusion -- Computer simulation2
Silicon -- Defects1
Silicon -- Diffusion rate1
Silicon crystals -- Electric properties1
Solar cells -- Design and construction1

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