Time domain electromagnetic simulation of VLSI interconnects Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/8c97kt099

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  • Current trends in integrated circuit technology are continuing towards physically smaller components and related structures. Interconnects between circuit components have reached sub-micron dimensions which can not be modeled accurately by the current ideal microstrip analysis based techniques. These techniques often assume that the structure being modeled is perfectly conducting, smooth, uniform, and infinitely thin. At submicron dimensions the magnitude of the surface roughness may approach the dimensions of the interconnect structure. To investigate the effects of surface roughness in micron and submicron integrated circuit interconnects the finite-difference time-domain technique has been employed to simulate periodic surface roughness on interconnect structures. The simulation technique is validated by comparing the results with known microstrip results. The finite-difference time-domain simulations are in three dimensions and incorporate the finite conductivity of the interconnect, interconnect thickness, and surface roughness. The effects of interconnect size reduction, conductivity, and periodic surface roughness are investigated using the finite-difference time-domain technique.
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  • File scanned at 300 ppi (Monochrome) using Capture Perfect 3.0 on a Canon DR-9050C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
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  • description.provenance : Made available in DSpace on 2013-01-07T17:22:49Z (GMT). No. of bitstreams: 1 FalconerMaynardC1993.pdf: 8402457 bytes, checksum: 5fd29f22ae8e683127e2c8a2a50a0d19 (MD5) Previous issue date: 1993-03-17
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