The growth of ternary compound semiconductors by molecular beam epitaxy Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/9w032637r

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  • This thesis reports on an investigation of the growth, by Molecular Beam Epitaxy, of III,III-V ternary compound semiconductors. Strained and unstrained growth was studied via the deposition of InGaAs on GaAs and InP substrates. Lattice matched InGaAs on InP was grown, and an in situ method was developed to find the oven temperatures which yield the lattice matched composition. Lattice mismatched systems were studied experimentally by growing thin layers of InGaAs between layers of GaAs. Growth was studied via Reflection High Energy Electron Diffraction. Structural properties were studied via Auger Sputter Profiling, Secondary Ion Mass Spectrometry, and Transmission Electron Microscopy. Optical properties were studied via Photoluminescence Spectroscopy. It is shown that lattice mismatch induced strain can significantly affect the resultant structure. One effect is a preferential migration of one constituent of the alloy to the surface. This segregation modifies the morphology of the structure altering the film's optical properties.
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