Calculation of axial mode separation of a semiconductor laser from reflectance spectrum

Graduate Thesis Or Dissertation

Público Deposited

Citeable URL: https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/m613n134v

Descriptions

Attribute Name	Values
Creator	Thinh, Nguyen Hoang
Abstract	It is reported that the axial mode separation of a semiconductor laser can be computed from the reflectance spectrum of a narrow spectral range near the lasing frequency. The Kramers-Kronig dispersion relation is used in this computation. GaAs semiconductor laser is taken as an example. The computed values of the normalized frequency separation for GaAs at lasing photon energy of 1.38 eV range from 0.107 to 0.111 for various widths of the reflectance spectrum. These results are in good agreement with the measured ones.
Resource Type	Masters Thesis
Fecha Disponible	2014-01-31T21:27:04+00:00
Fecha de Emisión	1972-04-13
Degree Level	Master's
Degree Name	Master of Science (M.S.)
Degree Field	Electrical and Electronics Engineering
Degree Grantor	Oregon State University
Commencement Year	1972
Advisor	Chang, Cheng C.
Academic Affiliation	Electrical and Electronics Engineering
Non-Academic Affiliation	Oregon State University. Graduate School
Subject	Lasers
Declaración de derechos	Copyright Not Evaluated
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Digitization Specifications	File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
Replaces	http://hdl.handle.net/1957/45492

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