Honors College Thesis
 

Characterization of BaCuSF Thin Films Grown in Excess Copper, by Pulsed Laser Deposition

Public Deposited

Contenu téléchargeable

Télécharger le fichier PDF
https://ir.library.oregonstate.edu/concern/honors_college_theses/h415pc63k

Descriptions

Attribute NameValues
Creator
Abstract
  • Thin films of the p-type semiconductor, barium copper sulfide fluoride (BaCuSF) were deposited using pulsed laser deposition. Similar p-type conductivity in Cu2O is caused by copper vacancies. Addition of copper dopant is proposed as a method for filling the copper vacancies in BaCuSF. The films are characterized to determine quality using x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption, Seebeck, and resistivity measurements. The optimal deposition parameters with no added copper are: substrate temperature of 525 ºC, argon gas pressure of 10-5 Torr, target-substrate distance of 2 inches, and a pulse repetition rate of 3 Hz. Copper is added to films produced at optimal deposition parameters at pulse ratios of 1000:1000 to 12:1000. Resistivity measurements are compared with theoretical copper content of the film to determine the success of the dopant. The film produced with a pulse ratio of 40:1000 has the closest to stoichiometric copper as well as the highest resistivity. This corresponds well with the filling of copper vacancies.
License
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Non-Academic Affiliation
Déclaration de droits
Publisher
Peer Reviewed
Language
Replaces

Des relations

Parents:

This work has no parents.

Dans Collection:

Articles

La vignette Titre Date de téléchargement Visibilité actes
file details Evans_Honors_Thesis.pdf 2017-07-29 Public Télécharger