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Filtering by: Subject Ferroelectric thin films Remove constraint Subject: Ferroelectric thin films Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • Modeling, Fabrication, and Characterization of Magnetic Thin Films for Integrated Inductor and MRAM Applications

    Creator:
    Buford, Benjamin
    Abstract:
    Magnetic thin films have potential to improve devices such as on-chip inductors, and enable new technologies such as magnetic random access memory (MRAM). The use of magnetic cores in on-chip inductors is typically limited to applications well under 1 GHz. At higher frequencies, the performance of the magnetic core is...
    Resource Type:
    Dissertation
    Full Text:
    anisotropy to increase the ferromagnetic resonance frequency and thus allow the use of thin-film magnetic

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    Material Development for Thin-film Transistors AN ABSTRACT

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    Thin-Film Transistors AN ABSTRACT OF THE DISSERTATION OF Bao-Sung Yeh for the degree

  • Comprehensive depletion-mode modeling of oxide thin-film transistors

    Creator:
    Zhou, Fan
    Abstract:
    The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
    Resource Type:
    Masters Thesis
    Full Text:
    Oxide Thin-Film Transistors. Abstract approved

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    : Atomic Solid State Energy Scale Applied to Novel Thin-Film Solar Absorbers Abstract approved: John F

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    herein represents an effort to combine the ultra-smooth sur- face of an amorphous metal thin film (AMTF

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    : Investigation of Ultra-thin In-Ga-Zn-O Thin-Film Transistors Abstract approved: John F. Wager The objective

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 µm