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Filtering by: Creator Hoffman, Justine D. Remove constraint Creator: Hoffman, Justine D. Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Brian D. Pelatt for the

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    cations (HMCs) with (n-1)d'°ns° (n4) electronic configurations. This thesis is devoted to the pursuit of

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    -mode Device Operation – The Hoffman Model ................. 23 2.3 TRANSPARENT THIN-FILM TRANSISTOR

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    enhancement-depletion (E-D) inverter based on heterogeneous channel materials. Simulation results using

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    -gate, (c) staggered top-gate, and (d) coplanar top-gate

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    acknowledgements. Two specific people I would like to mention are Randy Hoffman, inventor of the inorganic

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    E/D inverter is an important new functional block which will enable the realization of more complex

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    disadvantages [13]. The staggered bottom-gate structure is exclusively employed in this work. (b) (d) (a