Index Catalog // ScholarsArchive@OSU

Precipitation and winter temperature predict long-term range-scale abundance changes in Western North American birds

Creator:: Illán, Javier Gutiérrez, Thomas, Chris D., Jones, Julia A., Wong, Weng-Keen, Shirley, Susan M., and Betts, Matthew G.
Abstract:: Predicting biodiversity responses to climate change remains a difficult challenge, especially in climatically complex regions where precipitation is a limiting factor. Though statistical climatic envelope models are frequently used to project future scenarios for species distributions under climate change, these models are rarely tested using empirical data. We used long-term...
Resource Type:: Article
Full Text:: ., Thomas, C. D., Jones, J. A., Wong, W.-K., Shirley, S. M., & Betts, M. G. (2014). Precipitation and

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE THESIS OF John M. McGlone for the degree

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: AN ABSTRACT OF THE DISSERTATION OF John M. McGlone for the

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: approved: . John F. Wager This thesis focuses on two aspects of oxide

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: : __________________________________________________ John F. Conley, Jr. Transparent conductive oxides (TCOs), primarily indium doped tin oxide

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Creator:: Austin, Dustin Z.
Abstract:: Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have become a core passive component in modern integrated circuits. International Technology Roadmap for Semiconductors (ITRS) projections for scaling of analog/mixed-signal MIMCAP applications require simultaneously increasing capacitance density while maintaining low leakage current density and low voltage nonlinearity (characterized by the quadratic...
Resource Type:: Dissertation
Full Text:: John F. Conley Jr. Back end of line (BEOL) metal-insulator-metal capacitors (MIMCAPs) have

Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

Creator:: Witsell, Shane Mike’ele Williama
Abstract:: Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
Resource Type:: Masters Thesis
Full Text:: : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

Material development for thin-film transistors

Creator:: Archila, Kevin Alexander
Abstract:: The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
Resource Type:: Masters Thesis
Full Text:: Transistors Abstract approved: John F. Wager The focus of this thesis is developing materials for thin-film

Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

Creator:: Sundholm, Eric Steven
Abstract:: Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
Resource Type:: Masters Thesis
Full Text:: approved: John F. Wager Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the

Zinc tin oxide thin-film transistor circuits

Creator:: Heineck, Daniel Philip
Abstract:: The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
Resource Type:: Masters Thesis
Full Text:: Tin Oxide Thin-Film Transistor Circuits Abstract approved: John F. Wager The primary objective of

ScholarsArchive@OSU

Precipitation and winter temperature predict long-term range-scale abundance changes in Western North American birds

Thermally-stable amorphous metal thin films

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Contact resistance and stability assessment of oxide-based thin film transistors

Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors

Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

Material development for thin-film transistors

Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

Zinc tin oxide thin-film transistor circuits

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