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Filtering by: Creator Hall, Stephen A. Remove constraint Creator: Hall, Stephen A. Academic Affiliation Electrical and Computer Engineering Remove constraint Academic Affiliation: Electrical and Computer Engineering Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

    Creator:
    Yindeepol, Wipawan, 1960-
    Abstract:
    Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
    Resource Type:
    Masters Thesis
    Full Text:
    . The measurements were performed in the dark at room temperature. 3.4.3 Hall Bar Geometry A Hall

  • Fabrication, characterization and modeling of a superlattice base hot electron transistor

    Creator:
    Choo, Andrew Hua-kuang
    Resource Type:
    Masters Thesis
    Full Text:
    Privacy Abstract Approved: . Stephen M. Goodnick A superlattice base hot electron transistor is

  • Synchronization in a CMOS technology

    Creator:
    Flannagan, Stephen T.
    Abstract:
    The problem of synchronization arises in the interaction among digital systems not sharing a common clock reference. The reliability of synchronizers is related to metastable operation of bistable elements. Because of its subtle nature, the phenomenon until recently was not widely researched. However, the literature now contains a sound theoretical...
    Resource Type:
    Masters Thesis
    Full Text:
    May 1982 All Rights Reserved SYNCHRONIZATION IN A CMOS TECHNOLOGY by Stephen T. Flannagan A

  • Electron transport in coupled double quantum wells and wires

    Creator:
    Harff, Nathan E.
    Resource Type:
    Dissertation
    Full Text:
    Transport in Coupled Double Quantum Wells and Wires Abstract approved: Stephen M. Goodnick Jerry A

  • Two dimensional numerical simulation of a non-isothermal GaAs MESFET

    Creator:
    Lin, Angela A.
    Abstract:
    The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices for high power applications. To date, analytical thermal models of self heating in GaAs MESFETs are based on the assumption of a uniformly heated channel....
    Resource Type:
    Masters Thesis
    Full Text:
    of A Nonisothermal GaAs MESFET. A . Abstract approved: Redacted for Privacy Stephen Goodnick The

  • Design, fabrication and characterization of complementary heterojunction field effect transistors

    Creator:
    McMahon, Terry E. (Terry Edwin), 1963-
    Abstract:
    Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping. Circuits and individual n- and p- channel...
    Resource Type:
    Masters Thesis
    Full Text:
    : Stephen M. Goodnick, Advisor Complementary delta-doped A1GaAs /GaAs Heterojunction Field Effect

  • Monte Carlo device modeling applications on parallel computers

    Creator:
    Pennathur, Shankar S.
    Abstract:
    One of the ways of countering the ever increasing computational requirements in the simulation and modeling of electrical and electromagnetic devices and phenomena, is the development of simulation and modeling tools on parallel computing platforms. In this thesis, a previously developed Monte Carlo parallel device simulator is utilized, enhanced, and...
    Resource Type:
    Dissertation
    Full Text:
    Applications on Parallel Computers Abstract approved. Stephen M. Goodnick One of the ways of countering the

  • Modeling and characterization of hemt devices

    Creator:
    Chang, Chujyh
    Abstract:
    Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: Redacted for Privacy Stephen M. Goodnick Different gate length (0.5 gm 16 gm) Al GaAs/GaAs and

  • Hot electron transport and relaxation in quantum wells and superlattices

    Creator:
    Lary, Jenifer Edith
    Abstract:
    Electron transport and relaxation may be substantially different in low-dimensional systems compared to that observed in bulk material. In the present work, Monte Carlo models are used for the solution to the Boltzmann transport equation, with scattering rates calculated quantum mechanically for superlattice and quantum wells. Carrier relaxation following optical...
    Resource Type:
    Dissertation
    Full Text:
    and Relaxation in Quantum Wells and Super lattices Abstract approved: Redacted for Privacy Stephen M

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    cooled to a temperature of -90°C. 3.2.2 Van der Pauw Hall Mobility Measurement The MBE grown material