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Filtering by: Creator Pham, Long V. Remove constraint Creator: Pham, Long V. Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Electrical characterization, maximum charge-maximum voltage (Q[max]-V[max]) analysis, aging and temperature studies of thiogallate thin-film electroluminescent devices

    Creator:
    Pham, Long V.
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Long V. Pham for the degree of

  • Ferroelectric thin film development

    Creator:
    Harman, Taran V.
    Abstract:
    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Taran V. Harman for the degree of

  • Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

    Creator:
    Kumar, Manoj, 1972-
    Resource Type:
    Masters Thesis
    Full Text:
    Long Pham, Paul Keir, Shankar, Ming, and Robert Thuemlar for their interest in my work. Thanks also

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    Abstract approved: Jotin F. Wager The long-term goal of this research project is the development of

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    of ∼2 V. A five-stage ring oscillator circuit (which does not employ level-shifting) is fabricated

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    energy band diagrams for several biasing conditions (b) equilibrium, (c) accumulation (VGS > 0 V), and

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    ≈ 0 V, field-effect mobility of µFE = 9 cm−2V−1s−1, subthreshold slope of S = 90 mV/dec, and drain

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    ............................................................... 38 2.4 PREVIOUSLY REPORTED LONG-TERM INSTABILITY PROBLEMS ......................... 39 2.4.1

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Characterization of organic light-emitting devices

    Creator:
    Norris, Benjamin J.
    Abstract:
    In this thesis steady-state (i.e. steady-state with respect to the applied voltage waveform) transient current-transient voltage [i(t)-v(t)], transient brightness-transient current [b(t)-i(t)], transient brightness-transient voltage [b(t)-v(t)], transient current [i(t)], transient brightness [b(t)], and detrapped charge analysis are introduced as novel organic light emitting device (OLED) characterization methods. These analysis methods involve...
    Resource Type:
    Masters Thesis
    Full Text:
    current-transient voltage [i(t)-v(t)], transient brightness­ transient current [b(t)-i(t)], transient