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Filtering by: Creator Forbes, Gregory A. Remove constraint Creator: Forbes, Gregory A. Advisor Forbes, Leonard Remove constraint Advisor: Forbes, Leonard

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  • Random dopants and low-frequency noise reduction in deep-submicron MOSFET technology

    Creator:
    Miller, Drake A.
    Abstract:
    The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Drake A. Miller for the degree of Doctor of Philosophy in

  • Ultra low capacitance RFIC probe

    Creator:
    Jacob, Michael E.
    Abstract:
    In Radio Frequency Integrated Circuits (RFIC) or high frequency digital ICs, there is a demand to probe the internal nodes for testing. The ultra low capacitance RFIC probe presented in his work is a flexible tool for these applications. The probe utilizes the coupling between a tungsten needle and the...
    Resource Type:
    Masters Thesis
    Full Text:
    : ____________________________________________________ Leonard Forbes In Radio Frequency Integrated Circuits (RFIC) or high frequency digital

  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

  • Experimental verification of a new model for bipolar transistor flicker noise

    Creator:
    Li, Ling
    Abstract:
    Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly...
    Resource Type:
    Masters Thesis
    Full Text:
    of the DC base or 6 collector current. Thus Forbes et al. [251 have established a new model to

  • Suppression of substrate noise in a mixed-signal CMOS integrated circuit

    Creator:
    Lim, Wei Tjan (Richard)
    Abstract:
    Substrate switching noise is becoming a concern as integrated circuits get larger and speeds get faster. Mixed-mode integrated circuits are especially affected as the substrate noise interferes with sensitive analog circuits resulting in limited signal to noise ratios. This thesis serves to study the cause of the noise at the...
    Resource Type:
    Masters Thesis
    Full Text:
    Noise in a Mixed-Signal CMOS Integrated Circuit. Abstract approved: 41111111/"" Leonard Forbes

  • Comparison and analysis of jitter in CMOS ring oscillators

    Creator:
    Natesan, Peroly
    Abstract:
    A comparison and analysis of jitter for five different architectures of ring oscillators using a novel simulation technique developed by Professor Forbes' group is presented. Ring oscillators have become an essential building block in many digital and synchronous communications system due to their integrated nature and are widely used in...
    Resource Type:
    Masters Thesis
    Full Text:
    · redacted for privacy. ;;--7 .. I b (-./ LeenardForbes A comparison and analysis of jitter for five

  • An investigation of bulk stacking faults in silicon using photocapacitance transient spectroscopy

    Creator:
    Godbole, Hemendra G.
    Abstract:
    Imperfections in semiconductor materials constitute a rich area for research. The importance of the characterization of these imperfections cannot be understated. Junction spectroscopic techniques provide a unique tool for the study of these imperfections. The test specimens could consist of Schottky barrier, p-n junctions, or MOS structures. Using Schottky barrier...
    Resource Type:
    Masters Thesis
    Full Text:
    , after L. Forbes et. al. [4] 18 8 Current v/s Voltage charactaristic for a sample diode 20 9

  • Generation of substrate bias and current sources in CMOS technology

    Creator:
    Zhang, Jing, 1962-
    Abstract:
    A negatively biased substrate has several advantages over a grounded substrate in CMOS technology. The on-chip generation of this negative substrate bias has made chips easier to use when only a single supply is preferred. This project demonstrates two types of charge pump circuits used to generate negative voltages not...
    Resource Type:
    Masters Thesis
    Full Text:
    Sources in CMOS Technology. Abstract approved: Le and Forbes A negatively biased substrate has

  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    &* Abstract approved: Redacted for Privacy Leonard Forbes The purpose of this work is to develop a new model

  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    Forbes The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which